The Development of Semiconductor Materials
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The first generation of semiconductor materials: silicon (Si), and germanium (Ge) as the representative
The first generation of semiconductor materials are mainly silicon materials. At present, semiconductor devices and integrated circuits are still made mainly from silicon crystalline materials, and silicon devices make up more than 95 percent of all semiconductor products sold worldwide. The first generation of semiconductor application scenarios are very wide, from cutting-edge CPU, GPU, memory chips, and all kinds of charger power devices can be made. Although the first generation of semiconductor materials did not perform well in some areas, they won because they were cost-effective.
The second generation of semiconductor materials: gallium arsenide (GaAs), indium phosphide (InP) as the representative
With the rise of the information highway based on optical communication and the development of social informatization, the second-generation semiconductor materials represented by gallium arsenide and indium phosphor are emerging and showing their great advantages. Gallium arsenide and indium phosphor semiconductor lasers have become key devices in optical communication systems, and gallium arsenide high-speed devices have accelerated the development of new fiber and mobile communication industries. The main applications are optoelectronics, microelectronics, microwave power devices, etc.
The third generation of semiconductor materials: gallium nitride (GaN), silicon carbide (SiC) as the representative
The rise of the third generation of semiconductor materials is marked by the breakthrough of p-type doping of gallium nitride materials and the successful development of high-efficiency blue-green light-emitting diodes and blue-blue semiconductors lasers. It has excellent properties such as a high breakdown electric field, high thermal conductivity, high electron saturation rate, and strong radiation resistance. It is more suitable for making high temperature, high frequency, radiation resistance, and high-power electronic devices. It is the core component of solid-state light sources, power electronics, and microwave rf devices.
The fourth generation of semiconductor materials: gallium oxide (Ga2O3) as the representative
At present, the main material systems with the development potential to become the fourth generation of semiconductor technology mainly include narrow bandgap gallium antimonide, indium arsenic compound semiconductor; Ultra-wide bandgap oxide material; Other low-dimensional materials such as carbon-based nanomaterials, two - dimensional atomic crystal materials.
Ga2O3 is a direct bandgap semiconductor material, the bandgap is about 4.9eV (affected by the different crystal structures, different orientations, and other factors, the bandgap will be different), because its bandgap is much wider than SiC and GaN, so it is called ultra-wide bandgap semiconductor material. The breakdown field strength of Ga2O3 can theoretically reach 8MV/cm, 2.5 times that of GaN and more than 3 times that of SiC. In addition, Ga2O3 has good chemical and thermal stability, low cost, simple preparation method, easy to mass production, and obvious advantages in industrialization.
Ga2O3 is the fourth generation of ultra-wide bandgap gallium oxide (Ga2O3) and diamond and other new-generation materials, especially Ga2O3 because its substrate fabrication is easier than SiC and GaN, and because of its characteristics of the ultra-wide bandgap, the material can withstand higher voltage collapse voltage and critical electric field so that it has great potential in the application of ultra-high-power components.
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