1. Crystallography and Product Basics of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, differentiated by its remarkable polymorphism– over 250 well-known polytypes– all sharing strong directional covalent bonds yet varying in stacking series of Si-C bilayers.
The most technically relevant polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal kinds 4H-SiC and 6H-SiC, each exhibiting subtle variations in bandgap, electron mobility, and thermal conductivity that affect their suitability for particular applications.
The toughness of the Si– C bond, with a bond power of approximately 318 kJ/mol, underpins SiC’s remarkable firmness (Mohs hardness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.
In ceramic plates, the polytype is commonly selected based on the intended usage: 6H-SiC prevails in structural applications because of its simplicity of synthesis, while 4H-SiC dominates in high-power electronics for its exceptional fee service provider movement.
The vast bandgap (2.9– 3.3 eV relying on polytype) additionally makes SiC an exceptional electric insulator in its pure form, though it can be doped to function as a semiconductor in specialized digital tools.
1.2 Microstructure and Phase Purity in Ceramic Plates
The performance of silicon carbide ceramic plates is seriously dependent on microstructural functions such as grain size, density, stage homogeneity, and the visibility of additional stages or contaminations.
High-quality plates are generally made from submicron or nanoscale SiC powders through advanced sintering strategies, resulting in fine-grained, fully dense microstructures that make the most of mechanical strength and thermal conductivity.
Impurities such as free carbon, silica (SiO TWO), or sintering help like boron or aluminum have to be thoroughly controlled, as they can create intergranular films that lower high-temperature strength and oxidation resistance.
Recurring porosity, also at low levels (
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